Part Number Hot Search : 
EVH12390 13007 P2288 SEL2910D CY14B SF1605G ACE4000 DT430
Product Description
Full Text Search
 

To Download 2N5655 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 Product Specification
www.jmnic.com
Silicon NPN Power Transistors
DESCRIPTION With TO-126 package High breakdown voltage APPLICATIONS For use in line-operated equipment such as audio output amplifiers; low-current ,high-voltage converters; and AC line relays
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base
2N5655 2N5656 2N5657
Absolute maximum ratings(Ta=25ae )
SYMBOL PARAMETER 2N5655 VCBO Collector-base voltage 2N5656 2N5657 2N5655 VCEO Collector-emitter voltage 2N5656 2N5657 VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current Collector current-Peak Base current Total power dissipation Junction temperature Storage temperature TC=25ae Open collector Open base Open emitter CONDITIONS VALUE 250 300 350 275 325 375 6 0.5 1.0 0.25 20 150 -65~150 ae ae V A A A W V V UNIT
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 6.25 UNIT ae /W
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER 2N5655 VCEO(SUS) Collector-emitter sustaining voltage 2N5656 2N5657 VCEsat-1 VCEsat-2 VCEsat-3 VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Emitter-base on voltage 2N5655 ICEO Collector cut-off current 2N5656 2N5657 2N5655 ICBO Collector cut-off current 2N5656 2N5657 ICEX IEBO hFE-1 hFE-2 hFE-3 hFE-4 fT COB Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain DC current gain Transition frequency Output capacitance IC=100mA ;IB=10mA IC=250mA ;IB=25mA SYMBOL
2N5655 2N5656 2N5657
CONDITIONS
MIN 250
TYP.
MAX
UNIT
IC=0.1A; IB=0;L=50mH
300 350 1.0 2.5 10 1.0
V
V V V V
IC=500mA ;IB=100mA IC=100mA ; VCE=10V VCE=150V; IB=0 VCE=200V; IB=0 VCE=250V; IB=0 VCB=275V; IE=0 VCB=325V; IE=0 VCB=375V; IE=0 VCE= Rated VCEO; VBE(off)=1.5V TC=100ae VEB=6V; IC=0 IC=50mA ; VCE=10V IC=100mA ; VCE=10V IC=250mA ; VCE=10V IC=500mA ; VCE=10V IC=50mA ; VCE=10V;f=10MHz f=100kHz ; VCB=10V;IE=0 25 30 15 5 10
0.1
mA
10
|I
A
0.1 1.0 10 |I
mA A
250
MHz 25 pF
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
PACKAGE OUTLINE
2N5655 2N5656 2N5657
Fig.2 Outline dimensions
JMnic


▲Up To Search▲   

 
Price & Availability of 2N5655

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X